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buj103a


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                             BUJ103A
                             Silicon diffused power transistor
                             Rev. 03 -- 3 March 2005                              Product data sheet




1. Product profile

                1.1 General description
                        High-voltage, high-speed planar-passivated NPN power switching transistor in a SOT78
                        (TO-220AB) plastic package.

                1.2 Features
                        s Low thermal resistance                   s Fast switching


                1.3 Applications
                        s Electronic lighting ballasts             s DC-to-DC converters
                        s Inverters                                s Motor control systems


                1.4 Quick reference data
                        s VCESM  700 V                             s IC  4 A
                        s Ptot  80 W                               s hFEsat = 12.5 (typ)


2. Pinning information
Table 1:   Pinning
Pin              Description                                 Simplified outline       Symbol
1                base
                                                                        mb                             2
2                collector
3                emitter                                                                       1
mb               mounting base; connected to collector
                                                                                                       3
                                                                                                   sym056




                                                                       1 2 3

                                                                SOT78 (TO-220AB)
Philips Semiconductors                                                                                                                     BUJ103A
                                                                                                                 Silicon diffused power transistor



3. Ordering information
Table 2:          Ordering information
Type number                      Package
                                 Name                 Description                                                                                             Version
BUJ103A                          TO-220AB             plastic single-ended package; heatsink mounted; 1 mounting hole; 3-leads                                SOT78


4. Limiting values
Table 3:   Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol               Parameter                                             Conditions                                        Min                Max                Unit
VCESM                peak collector-emitter voltage                        VBE = 0 V                                         -                  700                V
VCBO                 collector-base voltage                                open emitter                                      -                  700                V
VCEO                 collector-emitter voltage                             open base                                         -                  400                V
IC                   collector current (DC)                                                                                  -                  4                  A
ICM                  peak collector current                                                                                  -                  8                  A
IB                   base current (DC)                                                                                       -                  2                  A
IBM                  peak base current                                                                                       -                  4                  A
Ptot                 total power dissipation                               Tmb  25 



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