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                        DISCRETE SEMICONDUCTORS




  DATA SHEET




  BUJ103A
  Silicon Diffused Power Transistor
Product specification                             August 1998
Philips Semiconductors                                                                              Product specification


  Silicon Diffused Power Transistor                                                                       BUJ103A


GENERAL DESCRIPTION
High-voltage, high-speed planar-passivated npn power switching transistor in TO220AB envelope intended for use
in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor control
systems, etc.

QUICK REFERENCE DATA
 SYMBOL          PARAMETER                                        CONDITIONS                       TYP.   MAX.     UNIT
 VCESM           Collector-emitter voltage peak value             VBE = 0 V                          -    700       V
 VCBO            Collector-Base voltage (open emitter)                                               -    700       V
 VCEO            Collector-emitter voltage (open base)                                               -    400       V
 IC              Collector current (DC)                           2                                  -     4        A
 ICM             Collector current peak value                                                        -     8        A
 Ptot            Total power dissipation                          Tmb  25 

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