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                        DISCRETE SEMICONDUCTORS




  DATA SHEET




  BUJ103AX
  Silicon Diffused Power Transistor
Product specification                             August 1998
Philips Semiconductors                                                                           Product specification


  Silicon Diffused Power Transistor                                                                    BUJ103AX


GENERAL DESCRIPTION
High-voltage, high-speed planar-passivated npn power switching transistor in a plastic full-pack envelope intended
for use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor
control systems, etc.

QUICK REFERENCE DATA
 SYMBOL          PARAMETER                                      CONDITIONS                     TYP.     MAX.      UNIT
 VCESM           Collector-emitter voltage peak value           VBE = 0 V                          -     700       V
 VCBO            Collector-Base voltage (open emitter)                                             -     700       V
 VCEO            Collector-emitter voltage (open base)                                             -     400       V
 IC              Collector current (DC)                                                            -      4        A
 ICM             Collector current peak value                                                      -      8        A
 Ptot            Total power dissipation                        Ths  25 

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