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Philips Semiconductors                                                                             Product specification

Silicon Diffused Power Transistor                                                                         BUJ105AB


GENERAL DESCRIPTION
High-voltage, high-speed planar-passivated npn power switching transistor in SOT404 (D2-PAK) surface-mount
package intended for use in high frequency electronic lighting ballast applications, converters, inverters, switching
regulators, motor control systems, etc.

QUICK REFERENCE DATA
 SYMBOL          PARAMETER                                      CONDITIONS                       TYP.     MAX.      UNIT
 VCESM           Collector-emitter voltage peak value           VBE = 0 V                           -      700       V
 VCBO            Collector-Base voltage (open emitter)                                              -      700       V
 VCEO            Collector-emitter voltage (open base)                                              -      400       V
 IC              Collector current (DC)                                                             -       8        A
 ICM             Collector current peak value                                                       -      16        A
 Ptot            Total power dissipation                        Tmb  25 

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