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Philips Semiconductors                                                                                  Product Specification

PowerMOS transistor                                                                               BUK436W-200A/B


GENERAL DESCRIPTION                           QUICK REFERENCE DATA
N-channel enhancement mode                     SYMBOL           PARAMETER                         MAX.         MAX.       UNIT
field-effect power transistor in a
plastic envelope.                                                                  BUK436         -200A        -200B
The device is intended for use in              VDS              Drain-source voltage               200          200         V
Switched Mode Power Supplies                   ID               Drain current (DC)                  19           17         A
(SMPS), motor control, welding,                Ptot             Total power dissipation            125          125         W
DC/DC and AC/DC converters, and                RDS(ON)          Drain-source on-state              0.16          0.2        
in general purpose switching                                    resistance
applications.

PINNING - SOT429 (TO247)                      PIN CONFIGURATION                        SYMBOL
  PIN               DESCRIPTION                                                                                d

    1       gate
    2       drain
                                                                                                    g
    3       source
   tab      drain                                           1    2    3
                                                                                                               s


LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
 SYMBOL             PARAMETER                            CONDITIONS             MIN.               MAX.                   UNIT
 VDS                Drain-source voltage                 -                        -                 200                    V
 VDGR               Drain-gate voltage                   RGS = 20 k               -                 200                    V
 

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