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Philips Semiconductors                                                                              Product specification

PowerMOS transistor                                                                                   BUK444-60H


GENERAL DESCRIPTION                          QUICK REFERENCE DATA
N-channel enhancement mode                     SYMBOL          PARAMETER                             MAX.       UNIT
field-effect power transistor in a
plastic full-pack envelope.                    VDS             Drain-source voltage                    60         V
The device is intended for use in              ID              Drain current (DC)                      21         A
Automotive applications, Switched              Ptot            Total power dissipation                 30        W
Mode Power Supplies (SMPS),                    Tj              Junction temperature                   150        

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