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Philips Semiconductors                                                                                Product Specification

PowerMOS transistor                                                                               BUK444-800A/B


GENERAL DESCRIPTION                           QUICK REFERENCE DATA
N-channel enhancement mode                     SYMBOL         PARAMETER                         MAX.         MAX.        UNIT
field-effect power transistor in a
plastic full-pack envelope.                                                      BUK444         -800A        -800B
The device is intended for use in              VDS            Drain-source voltage               800          800          V
Switched Mode Power Supplies                   ID             Drain current (DC)                  1.4          1.2         A
(SMPS), motor control, welding,                Ptot           Total power dissipation             30           30          W
DC/DC and AC/DC converters, and                RDS(ON)        Drain-source on-state               6.0          8.0         
in general purpose switching                                  resistance
applications.

PINNING - SOT186                              PIN CONFIGURATION                        SYMBOL
  PIN               DESCRIPTION                                                                              d
                                                           case
    1       gate
    2       drain
                                                                                                  g
    3       source
 case isolated
                                                                  1 2 3                                      s


LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
 SYMBOL             PARAMETER                            CONDITIONS             MIN.             MAX.                    UNIT
 VDS                Drain-source voltage                 -                       -                800                     V
 VDGR               Drain-gate voltage                   RGS = 20 k              -                800                     V
 



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