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Philips Semiconductors                                                                                Product Specification

PowerMOS transistor                                                                               BUK445-200A/B


GENERAL DESCRIPTION                           QUICK REFERENCE DATA
N-channel enhancement mode                     SYMBOL         PARAMETER                         MAX.         MAX.        UNIT
field-effect power transistor in a
plastic full-pack envelope.                                                      BUK445         -200A        -200B
The device is intended for use in              VDS            Drain-source voltage               200          200           V
Switched Mode Power Supplies                   ID             Drain current (DC)                  7.6           7           A
(SMPS), motor control, welding,                Ptot           Total power dissipation             30           30          W
DC/DC and AC/DC converters, and                Tj             Junction temperature               150          150          

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