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buk451-100a-b_1


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Philips Semiconductors                                                                       Preliminary Specification

PowerMOS transistor                                                                          BUK451-100A/B


GENERAL DESCRIPTION                       QUICK REFERENCE DATA
N-channel enhancement mode                 SYMBOL        PARAMETER                      MAX.         MAX.    UNIT
field-effect power transistor in a
plastic envelope.                                                           BUK451      -100A        -100B
The device is intended for use in          VDS           Drain-source voltage            100          100       V
Switched Mode Power Supplies               ID            Drain current (DC)               3.0          3.0      A
(SMPS), motor control, welding,            Ptot          Total power dissipation          40           40      W
DC/DC and AC/DC converters, and            Tj            Junction temperature            175          175      



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