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Philips Semiconductors                                                                                        Product Specification

PowerMOS transistor                                                                                       BUK454-200A/B


GENERAL DESCRIPTION                           QUICK REFERENCE DATA
N-channel enhancement mode                          SYMBOL              PARAMETER                                   MAX.         UNIT
field-effect power transistor in a plastic
envelope suitable for use in surface                VDS                 Drain-source voltage                        200            V
mount applications.                                 ID                  Drain current (DC)                          9.2            A
The device is intended for use in                   Ptot                Total power dissipation                     90            W
Switched Mode Power Supplies                        Tj                  Junction temperature                        175           

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