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Philips Semiconductors                                                                                Product specification

PowerMOS transistor                                                                               BUK456-100A/B


GENERAL DESCRIPTION                           QUICK REFERENCE DATA
N-channel enhancement mode                     SYMBOL         PARAMETER                         MAX.        MAX.        UNIT
field-effect power transistor in a
plastic envelope.                                                                BUK456      -100A          -100B
The device is intended for use in              VDS            Drain-source voltage            100            100           V
Switched Mode Power Supplies                   ID             Drain current (DC)               34             32           A
(SMPS), motor control, welding,                Ptot           Total power dissipation         150            150          W
DC/DC and AC/DC converters, and                Tj             Junction temperature            175            175          

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