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buk456-60h_1


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Philips Semiconductors                                                                               Product Specification

PowerMOS transistor                                                                                        BUK456-60H


GENERAL DESCRIPTION                           QUICK REFERENCE DATA
N-channel enhancement mode                     SYMBOL         PARAMETER                                MAX.            UNIT
field-effect power transistor in a
plastic envelope.                              VDS            Drain-source voltage                     60               V
The device is intended for use in              ID             Drain current (DC)                       60               A
Automotive and general purpose                 Ptot           Total power dissipation                  150             W
switching applications.                        Tj             Junction temperature                     175             



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