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Philips Semiconductors                                                                                       Product specification

PowerMOS transistor                                                                                            BUK462-100A


GENERAL DESCRIPTION                          QUICK REFERENCE DATA
N-channel enhancement mode                          SYMBOL             PARAMETER                                MAX.      UNIT
field-effect power transistor in a plastic
envelope suitable for surface mount                 VDS                Drain-source voltage                     100         V
applications.                                       ID                 Drain current (DC)                        11         A
The device is intended for use in                   Ptot               Total power dissipation                   60        W
Switched Mode Power Supplies                        Tj                 Junction temperature                     175        

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