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Philips Semiconductors                                                                                     Product specification

PowerMOS transistor                                                                                          BUK464-60H


GENERAL DESCRIPTION                          QUICK REFERENCE DATA
N-channel enhancement mode                     SYMBOL                PARAMETER                              MAX.       UNIT
field-effect power transistor in a
plastic envelope suitable for surface          VDS                   Drain-source voltage                     60         V
mount applications.                            ID                    Drain current (DC)                       41         A
The device is intended for use in              Ptot                  Total power dissipation                 125        W
automotive and general purpose                 Tj                    Junction temperature                    175        

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