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Philips Semiconductors                                                                                  Product specification

PowerMOS transistor                                                                                          BUK465-60H


GENERAL DESCRIPTION                          QUICK REFERENCE DATA
N-channel enhancement mode                     SYMBOL              PARAMETER                                MAX.             UNIT
field-effect power transistor in a
plastic envelope suitable for surface          VDS                 Drain-source voltage                       60              V
mount applications.                            ID                  Drain current (DC)                         43              A
The device is intended for use in              Ptot                Total power dissipation                   125             W
automotive and general purpose                 Tj                  Junction temperature                      175             

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