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Philips Semiconductors                                                                                           Product specification

PowerMOS transistor                                                                                                BUK466-100A


GENERAL DESCRIPTION                           QUICK REFERENCE DATA
N-channel enhancement mode                         SYMBOL               PARAMETER                                   MAX.       UNIT
field-effect power transistor in a plastic
envelope suitable for surface mount                VDS                  Drain-source voltage                         100         V
applications.                                      ID                   Drain current (DC)                            34         A
The device is intended for use in                  Ptot                 Total power dissipation                      150        W
Switched Mode Power Supplies                       Tj                   Junction temperature                         175        

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