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Philips Semiconductors                                                                                Product specification

PowerMOS transistor                                                                               BUK473-100A/B
Isolated version of BUK453-100A/B

GENERAL DESCRIPTION                           QUICK REFERENCE DATA
N-channel enhancement mode                     SYMBOL         PARAMETER                         MAX.         MAX.       UNIT
field-effect power transistor in a
plastic full-pack envelope. The                                                  BUK473         -100A        -100B
device is intended for use in Switched         VDS            Drain-source voltage               100          100        V
Mode Power Supplies (SMPS),                    ID             Drain current (DC)                   9            8        A
motor control, welding, DC/DC and              Ptot           Total power dissipation             25           25        W
AC/DC converters, and in general               RDS(ON)        Drain-source on-state              0.16          0.2       
purpose switching applications.                               resistance

PINNING - SOT186A                             PIN CONFIGURATION                        SYMBOL
  PIN               DESCRIPTION                                                                              d
                                                            case

    1       gate

    2       drain
                                                                                                  g
    3       source
  case isolated
                                                                   1 2 3                                     s


LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
 SYMBOL             PARAMETER                            CONDITIONS             MIN.             MAX.                   UNIT
 VDS                Drain-source voltage                 -                       -                100                    V
 VDGR               Drain-gate voltage                   RGS = 20 k              -                100                    V
 

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