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>> Download buk475-60a-b_1 documenatation <<Text preview - extract from the documentPhilips Semiconductors Product specification
PowerMOS transistor BUK475-60A/B
Isolated version of BUK455-60A/B
GENERAL DESCRIPTION QUICK REFERENCE DATA
N-channel enhancement mode SYMBOL PARAMETER MAX. MAX. UNIT
field-effect power transistor in a
plastic full-pack envelope. The BUK475 -60A -60B
device is intended for use in Switched VDS Drain-source voltage 60 60 V
Mode Power Supplies (SMPS), ID Drain current (DC) 21 20 A
motor control, welding, DC/DC and Ptot Total power dissipation 30 30 W
AC/DC converters, and in automotive Tj Junction temperature 150 150
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