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Philips Semiconductors                                                                              Product specification

PowerMOS transistor                                                                                   BUK475-60H
Isolated version of BUK455-60H

GENERAL DESCRIPTION                          QUICK REFERENCE DATA
N-channel enhancement mode                     SYMBOL          PARAMETER                             MAX.       UNIT
field-effect power transistor in a
plastic full-pack envelope. The device         VDS             Drain-source voltage                   60          V
is intended for use in Automotive              ID              Drain current (DC)                    22.5         A
applications, Switched Mode Power              Ptot            Total power dissipation                30         W
Supplies (SMPS), motor control,                Tj              Junction temperature                  150         

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