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Philips Semiconductors                                                                                     Product Specification

PowerMOS transistor                                                                                         BUK482-100A


GENERAL DESCRIPTION                            QUICK REFERENCE DATA
N-channel enhancement mode                      SYMBOL           PARAMETER                                 MAX.              UNIT
field-effect power transistor in a
plastic envelope suitable for surface           VDS              Drain-source voltage                      100                  V
mount applications.                             ID               Drain current (DC)                         1.8                 A
The device is intended for use in               Ptot             Total power dissipation                    1.8                W
automotive and general purpose                  Tj               Junction temperature                      150                 

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