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Philips Semiconductors                                                                            Product specification

PowerMOS transistor                                                                               BUK482-200A


GENERAL DESCRIPTION                      QUICK REFERENCE DATA
N-channel enhancement mode               SYMBOL         PARAMETER                                   MAX.      UNIT
field-effect power transistor in a
plastic envelope suitable for surface    VDS            Drain-source voltage                         200        V
mounting featuring high avalanche        ID             Drain current (DC)                           2.0        A
energy capability, stable blocking       Ptot           Total power dissipation                      8.3        W
voltage, fast switching and high         RDS(ON)        Drain-source on-state resistance             0.9        
thermal      cycling   performance.
Intended for use in Switched Mode
Power Supplies (SMPS) and general
purpose switching applications.

PINNING - SOT223                         PIN CONFIGURATION                      SYMBOL
  PIN           DESCRIPTION                                       4                                  d

    1   gate
    2   drain
                                                                                            g
    3   source

    4   drain (tab)
                                                   1          2       3                              s


LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
 SYMBOL PARAMETER                         CONDITIONS                                       MIN.     MAX.      UNIT
 VDS        Drain-source voltage                                                            -        200        V
 VDGR       Drain-gate voltage            RGS = 20 k                                        -        200        V
 

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