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Philips Semiconductors                                                                                 Product Specification

PowerMOS transistor                                                                                    BUK543-60A/B
Logic level FET

GENERAL DESCRIPTION                           QUICK REFERENCE DATA
N-channel enhancement mode                     SYMBOL         PARAMETER                         MAX.            MAX.         UNIT
logic level field-effect power
transistor in a plastic full-pack                                                BUK543         -60A            -60B
envelope.                                      VDS            Drain-source voltage                60             60            V
The device is intended for use in              ID             Drain current (DC)                  13             12            A
Switched Mode Power Supplies                   Ptot           Total power dissipation             25             25            W
(SMPS), motor control, welding,                RDS(ON)        Drain-source on-state             0.085            0.1           
DC/DC and AC/DC converters, and                               resistance;        VGS 5 V
in automotive and general purpose
switching applications.

PINNING - SOT186                              PIN CONFIGURATION                        SYMBOL
  PIN               DESCRIPTION                                                                                  d
                                                           case
    1       gate
    2       drain
                                                                                                  g
    3       source

 case isolated
                                                                  1 2 3                                          s


LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
 SYMBOL             PARAMETER                             CONDITIONS            MIN.              MAX.                       UNIT
 VDS                Drain-source voltage                  -                      -                    60                      V
 VDGR               Drain-gate voltage                    RGS = 20 k             -                    60                      V
 

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