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Philips Semiconductors                                                                           Product specification

PowerMOS transistor                                                                                BUK545-60H
Logic level FET

GENERAL DESCRIPTION                          QUICK REFERENCE DATA
N-channel enhancement mode logic               SYMBOL         PARAMETER                           MAX.       UNIT
level field-effect power transistor in
a plastic full-pack envelope.                  VDS            Drain-source voltage                  60         V
The device is intended for use in              ID             Drain current (DC)                    21         A
Automotive applications, Switched              Ptot           Total power dissipation               30        W
Mode Power Supplies (SMPS),                    Tj             Junction temperature                 150        

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