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Philips Semiconductors                                                                               Product specification

PowerMOS transistor                                                                                       BUK553-48C
Voltage clamped logic level FET

GENERAL DESCRIPTION                            QUICK REFERENCE DATA
Protected N-channel enhancement                SYMBOL     PARAMETER                      MIN.        TYP.        MAX. UNIT
mode logic level field-effect power
transistor in a plastic envelope.              V(CL)DSR   Drain-source clamp voltage      40          48           58      V
The device is intended for use in              ID         Drain current (DC)                                       21      A
automotive applications. It has                Ptot       Total power dissipation                                  75     W
built-in zener diodes providing active         Tj         Junction temperature                                    175     

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