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Philips Semiconductors                                                                              Product Specification

PowerMOS transistor                                                                                       BUK556-60A
Logic level FET

GENERAL DESCRIPTION                          QUICK REFERENCE DATA
N-channel enhancement mode                     SYMBOL     PARAMETER                                        MAX.       UNIT
logic level field-effect power
transistor in a plastic envelope.              VDS        Drain-source voltage                              60          V
The device is intended for use in              ID         Drain current (DC)                                50          A
Switched Mode Power Supplies                   Ptot       Total power dissipation                          150         W
(SMPS), motor control, welding,                RDS(ON)    Drain-source on-state resistance                  26         m
DC/DC and AC/DC converters, and                                                        VGS = 5 V
in automotive and general purpose
switching applications.

PINNING - TO220AB                            PIN CONFIGURATION                     SYMBOL
  PIN               DESCRIPTION                                                                            d
                                                         tab

    1       gate
    2       drain
                                                                                                g
    3       source
   tab      drain
                                                               1 23                                        s


LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
 SYMBOL             PARAMETER                            CONDITIONS              MIN.               MAX.             UNIT
 VDS                Drain-source voltage                 -                          -               60                 V
 VDGR               Drain-gate voltage                   RGS = 20 k                 -               60                 V
 

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