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Philips Semiconductors                                                                                Product Specification

PowerMOS transistor                                                                                      BUK556-60H
Logic level FET

GENERAL DESCRIPTION                            QUICK REFERENCE DATA
N-channel enhancement mode logic               SYMBOL      PARAMETER                                             MAX.    UNIT
level field-effect power transistor in a
plastic envelope.                              VDS         Drain-source voltage                                   60       V
The device is intended for use in              ID          Drain current (DC)                                     60       A
automotive and general purpose                 Ptot        Total power dissipation                                150     W
switching applications.                        Tj          Junction temperature                                   175     

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