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Philips Semiconductors                                                                                      Product specification

PowerMOS transistor                                                                                              BUK563-48C
Voltage clamped logic level FET

GENERAL DESCRIPTION                            QUICK REFERENCE DATA
Protected N-channel enhancement                SYMBOL            PARAMETER                      MIN.        TYP.        MAX. UNIT
mode logic level field-effect power
transistor in a plastic envelope               V(CL)DSR          Drain-source clamp voltage      40          48           58      V
suitable     for    surface    mount           ID                Drain current (DC)                                       21      A
applications.                                  Ptot              Total power dissipation                                  75     W
The device is intended for use in              Tj                Junction temperature                                    175     

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