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Philips Semiconductors                                                                                   Product specification

PowerMOS transistor                                                                                           BUK563-60A
Logic level FET

GENERAL DESCRIPTION                          QUICK REFERENCE DATA
N-channel enhancement mode logic               SYMBOL                 PARAMETER                              MAX.             UNIT
level field-effect power transistor in
a plastic envelope suitable for                VDS                    Drain-source voltage                     60               V
surface mount applications.                    ID                     Drain current (DC)                       21               A
The device is intended for use in              Ptot                   Total power dissipation                  75              W
automotive and general purpose                 Tj                     Junction temperature                    175              

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