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Philips Semiconductors                                                                                  Product specification

PowerMOS Transistor                                                                                           BUK563-80B
Logic level FET

GENERAL DESCRIPTION                          QUICK REFERENCE DATA
N-channel enhancement mode                    SYMBOL                 PARAMETER                                MAX.         UNIT
logic level field-effect power
transistor in a plastic envelope.             VDS                    Drain-source voltage                       80            V
The device is intended for use in             ID                     Drain current (DC)                         16            A
Switched Mode Power Supplies                  Ptot                   Total power dissipation                    75           W
(SMPS), motor control, welding,               Tj                     Junction temperature                      175           

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