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Philips Semiconductors                                                                                      Product specification

PowerMOS transistor                                                                                             BUK565-100A
Logic level FET

GENERAL DESCRIPTION                           QUICK REFERENCE DATA
N-channel enhancement mode logic                   SYMBOL             PARAMETER                                 MAX.       UNIT
level field-effect power transistor in a
plastic envelope suitable for surface              VDS                Drain-source voltage                       100         V
mount applications.                                ID                 Drain current (DC)                          25         A
The device is intended for use in                  Ptot               Total power dissipation                    125        W
Switched Mode Power Supplies                       Tj                 Junction temperature                       175        

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