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Philips Semiconductors                                                                                      Product Specification

PowerMOS transistor                                                                                            BUK582-60A
Logic level FET

GENERAL DESCRIPTION                            QUICK REFERENCE DATA
N-channel enhancement mode                      SYMBOL           PARAMETER                                  MAX.              UNIT
logic level field-effect power
transistor in a plastic envelope                VDS              Drain-source voltage                        60                  V
suitable for surface mount                      ID               Drain current (DC)                          2.5                 A
applications.                                   Ptot             Total power dissipation                     1.7                W
The device is intended for use in               Tj               Junction temperature                       150                 



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