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Philips Semiconductors                                                                                       Product specification

 PowerMOS transistor                                                                                           BUK583-60A
 Logic level FET

GENERAL DESCRIPTION                              QUICK REFERENCE DATA
N-channel enhancement mode                         SYMBOL         PARAMETER                                  MAX.              UNIT
logic level field-effect power
transistor in a plastic envelope                   VDS            Drain-source voltage                        60                  V
suitable for surface mount                         ID             Drain current (DC)                          3.2                 A
applications.                                      Ptot           Total power dissipation                     1.8                W
The device is intended for use in                  Tj             Junction temperature                       150                 

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