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                   BUK655R0-75C
                   N-channel TrenchMOS FET
                   Rev. 02 -- 14 October 2010                                               Product data sheet




1. Product profile

          1.1 General description
              Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET)
              in a plastic package using advanced TrenchMOS technology. This product has been
              designed and qualified to the appropriate AEC Q101 standard for use in high performance
              automotive applications.

          1.2 Features and benefits
                     AEC Q101 compliant                               Suitable for thermally demanding
                     Suitable for intermediate level gate             environments due to 175 

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