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                   BUK662R7-55C
                   N-channel TrenchMOS intermediate level FET
                   Rev. 01 -- 7 September 2010                                      Product data sheet




1. Product profile

          1.1 General description
              Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET)
              in a plastic package using advanced TrenchMOS technology. This product has been
              designed and qualified to the appropriate AEC Q101 standard for use in high performance
              automotive applications.

          1.2 Features and benefits
                AEC Q101 compliant                              Suitable for thermally demanding
                Suitable for intermediate level gate            environments due to 175 

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