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                       BUK664R4-55C
          K
       PA
     D2
                       N-channel TrenchMOS intermediate level FET
                       Rev. 03 -- 21 December 2010                                                  Product data sheet




1. Product profile

              1.1 General description
                  Intermediate level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
                  package using TrenchMOS technology. This product has been designed and qualified to
                  the appropriate AEC standard for use in automotive critical applications.

              1.2 Features and benefits
                         AEC Q101 compliant                                  Suitable for thermally demanding
                         Suitable for intermediate level gate                environments due to 175 

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