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Philips Semiconductors                                                                                Product specification

TrenchMOSTM transistor                                                                                  BUK7506-55A
Standard level FET

GENERAL DESCRIPTION                           QUICK REFERENCE DATA
N-channel enhancement mode                     SYMBOL         PARAMETER                               MAX.         UNIT
standard level field-effect power
transistor in a plastic envelope using         VDS            Drain-source voltage                     55            V
'trench' technology which features             ID             Drain current (DC)                       75            A
very low on-state resistance. It is            Ptot           Total power dissipation                 230           W
intended for use in automotive and             Tj             Junction temperature                    175           

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