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Philips Semiconductors                                                                                Product specification

TrenchMOS transistor                                                                                    BUK7508-55A
Standard level FET                                                                                      BUK7608-55A

GENERAL DESCRIPTION                       QUICK REFERENCE DATA
N-channel enhancement mode                 SYMBOL             PARAMETER                               MAX.          UNIT
standard level field-effect power
transistor in a plastic envelope           VDS                Drain-source voltage                     55              V
available in TO220AB and SOT404 .          ID                 Drain current (DC)                       75              A
Using 'trench' technology which            Ptot               Total power dissipation                 200             W
features     very     low    on-state      Tj                 Junction temperature                    175             

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