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Philips Semiconductors                                                                                Product specification

TrenchMOSTM transistor                                                                                    BUK7535-55
Standard level FET

GENERAL DESCRIPTION                           QUICK REFERENCE DATA
N-channel enhancement mode                     SYMBOL         PARAMETER                               MAX.          UNIT
standard level field-effect power
transistor in a plastic envelope using         VDS            Drain-source voltage                     55             V
'trench' technology. The device                ID             Drain current (DC)                       34             A
features very low on-state resistance          Ptot           Total power dissipation                  85            W
and has integral zener diodes giving           Tj             Junction temperature                    175            

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