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Philips Semiconductors                                                                               Product specification

TrenchMOSTM transistor                                                                                 BUK78150-55
Standard level FET

GENERAL DESCRIPTION                           QUICK REFERENCE DATA
N-channel enhancement mode logic               SYMBOL        PARAMETER                               MAX.          UNIT
level field-effect power transistor in a
plastic envelope suitable for surface          VDS           Drain-source voltage                     55             V
mounting. Using 'trench' technology            ID            Drain current                           5.5             A
the device features very low on-state          Ptot          Total power dissipation                 1.8            W
resistance and has integral zener              Tj            Junction temperature                    150            

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