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TrenchPLUS standard level FET
Rev. 01 -- 9 February 2004 Product data
1. Product profile
1.1 Description
N-channel enhancement mode field-effect power transistor in a plastic package using
TrenchMOSTM technology, featuring very low on-state resistance and TrenchPLUS
current sensing.
1.2 Features
s Integrated current sensor s Standard level compatible.
1.3 Applications
s Variable Valve Timing for engines s Electrical Power Assisted Steering.
1.4 Quick reference data
s VDS 40 V s RDSon = 4.5 m (typ)
s ID 155 A s ID/Isense = 500 (typ).
2. Pinning information
Table 1: Pinning - SOT263B simplified outline and symbol
Pin Description Simplified outline Symbol
1 gate (g)
mb d
2 Isense (Is)
3 drain (d)
4 Kelvin source g
5 source (s)
Isense s Kelvin source
mb mounting base;
03nl64
connected to drain (d)
1 5
MBL263
SOT263B (TO-220)
Philips Semiconductors BUK7905-40AI
TrenchPLUS standard level FET
3. Ordering information
Table 2: Ordering information
Type number Package
Name Description Version
BUK7905-40AI D2-PAK Plastic single ended package; heatsink mounted; 1 mounting hole; 5-lead SOT263B
TO-220
4. Limiting values
Table 3: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
VDS drain-source voltage (DC) - 40 V
VDGR drain-gate voltage (DC) RGS = 20 k - 40 V
VGS gate-source voltage (DC) -
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