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                     BUK7E04-40A
                     N-channel TrenchMOS standard level FET
                     Rev. 03 -- 15 June 2010                                                  Product data sheet



1. Product profile

          1.1 General description
              Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
              package using TrenchMOS technology. This product has been designed and qualified to
              the appropriate AEC standard for use in automotive critical applications.

          1.2 Features and benefits
                     Low conduction losses due to low                  Suitable for standard level gate drive
                     on-state resistance                               sources
                     Q101 compliant                                    Suitable for thermally demanding
                                                                       environments due to 175 

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