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                              BUK7E07-55B
                              N-channel TrenchMOS standard level FET
                              Rev. 01 -- 29 January 2008                                       Product data sheet




1. Product profile

                       1.1 General description
                           N-channel enhancement mode power Field-Effect Transistor (FET) in a plastic package
                           using NXP High-Performance Automotive (HPA) TrenchMOS technology. This product has
                           been designed and qualified to the appropriate AEC standard for use in Automotive critical
                           applications.

                       1.2 Features
                           I Very low on-state resistance                  I Q101 compliant
                           I 175 

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