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                     BUK7L11-34ARC
                     N-channel TrenchPLUS standard level FET
                     Rev. 05 -- 17 February 2009                                               Product data sheet



1. Product profile

          1.1 General description
              Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
              package using TrenchMOS technology. The devices include internal gate resistors and
              TrenchPLUS diodes for clamping and ElectroStatic Discharge (ESD) protection. This
              product has been designed and qualified to the appropriate AEC standard for use in
              automotive critical applications.

          1.2 Features and benefits
                     Low conduction losses due to low                        Reduced component count due to
                     on-state resistance                                     integrated gate resistor
                     Q101 compliant

          1.3 Applications
                     12 V loads                                              General purpose power switching
                     Automotive systems                                      Motors, lamps and solenoids

          1.4 Quick reference data
              Table 1.       Quick reference
              Symbol Parameter                        Conditions                         Min    Typ   Max   Unit
              ID            drain current             VGS = 10 V; Tmb = 25 

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