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buk9107-55ate_buk9907-55ate


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                                   BUK91/9907-55ATE
                                   TrenchPLUS logic level FET
                                   Rev. 01 -- 7 February 2002                                                     Product data



1. Description
                               N-channel enhancement mode field-effect power transistor in a plastic package using
                               TrenchMOSTM technology, featuring very low on state resistance and TrenchPLUS
                               diodes for clamping, ElectroStatic Discharge (ESD) protection and temperature
                               sensing.

                               Product availability:

                                   BUK9107-55ATE in SOT426 (D2-PAK)
                                   BUK9907-55ATE in SOT263B.


2. Features
                               s    Typical on-state resistance 5.8 m
                               s    Q101 compliant
                               s    ESD protection
                               s    Monolithically integrated temperature sensor for overload protection.


3. Applications
                               s Automotive and power switching:
                                  x 12 V and 24 V high power motor drives (e.g. Electrical Power Assisted
                                    Steering (EPAS))
                                  x Protected drive for lamps.


4. Pinning information
Table 1:   Pinning - SOT426 and SOT263B simplified outline and symbol
Pin   Description                  Simplified outline                                           Symbol
1     gate (g)
                                                                              mb                              d     a
2     anode (a)                                         mb

3     drain (d)
                                                                                                     g
4     cathode (k)
                                       1 2 3 4 5
5     source (s)
mb    mounting base;                                                                                 MBL317   s     k
      connected to drain (d)         Front view                 MBK127
                                                                         1         5
                                                                                       MBL263
                                              SOT426 (D2-PAK)                SOT263B
Philips Semiconductors                                                              BUK91/9907-55ATE
                                                                                               TrenchPLUS logic level FET


5. Quick reference data
Table 2:          Quick reference data
Symbol Parameter                                        Conditions                                    Typ                Max                Unit
VDS              drain-source voltage (DC)              Tj = 25 



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