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Philips Semiconductors                                                                             Product specification

PowerMOS transistor                                                                                BUK9120-48TC
Voltage clamped logic level FET
with temperature sensing diodes

GENERAL DESCRIPTION                        QUICK REFERENCE DATA
Protected N-channel enhancement            SYMBOL          PARAMETER                        MIN.   TYP.       MAX. UNIT
mode logic level field-effect power
transistor in a plastic envelope           V(CL)DSR        Drain-source clamp voltage       40      45          55         V
suitable for surface mounting. Using       ID              Drain current (DC)                                   52         A
'trench' technology the device             Ptot            Total power dissipation                             116        W
features very low on-state resistance      Tj              Junction temperature                                175        

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