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Philips Semiconductors                                                                                Product specification

TrenchMOS transistor                                                                                  BUK92150-55A
Logic level FET

GENERAL DESCRIPTION                           QUICK REFERENCE DATA
N-channel enhancement mode logic               SYMBOL        PARAMETER                                MAX.         UNIT
level field-effect power transistor in a
plastic envelope suitable for surface          VDS           Drain-source voltage                      55             V
mounting. Using 'trench' technology            ID            Drain current (DC)                       10.7            A
the device features very low on-state          Ptot          Total power dissipation                   36            W
resistance. It is intended for use in          Tj            Junction temperature                     175            

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