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N-channel TrenchMOS logic level FET
Rev. 3 -- 20 April 2011 Product data sheet
1. Product profile
1.1 General description
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product has been designed and qualified to
the appropriate AEC standard for use in automotive critical applications.
1.2 Features and benefits
AEC Q101 compliant Low conduction losses due to low
on-state resistance
1.3 Applications
Automotive and general purpose
power switching
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
VDS drain-source voltage Tj 25
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