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Philips Semiconductors                                                                                 Product specification

TrenchMOSTM transistor                                                                                   BUK9505-30A
Logic level FET

GENERAL DESCRIPTION                           QUICK REFERENCE DATA
N-channel enhancement mode logic               SYMBOL         PARAMETER                                MAX.            UNIT
level field-effect power transistor in a
plastic envelope using 'trench'                VDS            Drain-source voltage                      30                V
technology which features very low             ID             Drain current (DC)                        75                A
on-state resistance. It is intended for        Ptot           Total power dissipation                  230               W
use in automotive and general                  Tj             Junction temperature                     175               

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