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Philips Semiconductors                                                                                 Product specification

TrenchMOS transistor                                                                                   BUK95150-55A
Logic level FET                                                                                        BUK96150-55A

GENERAL DESCRIPTION                        QUICK REFERENCE DATA
N-channel enhancement mode logic           SYMBOL             PARAMETER                                MAX.         UNIT
level field-effect power transistor in a
plastic envelope available in              VDS                Drain-source voltage                      55             V
TO220AB and SOT404 . Using                 ID                 Drain current (DC)                        13             A
'trench' technology which features         Ptot               Total power dissipation                   53            W
very low on-state resistance. It is        Tj                 Junction temperature                     175            

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