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Philips Semiconductors                                                                                 Product specification

TrenchMOSTM transistor                                                                                     BUK9510-30
Logic level FET

GENERAL DESCRIPTION                           QUICK REFERENCE DATA
N-channel enhancement mode logic               SYMBOL         PARAMETER                                MAX.          UNIT
level field-effect power transistor in a
plastic envelope using 'trench'                VDS            Drain-source voltage                      30             V
technology. The device features very           ID             Drain current (DC)                        75             A
low on-state resistance and has                Ptot           Total power dissipation                  142            W
integral zener diodes giving ESD               Tj             Junction temperature                     175            

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